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Data Sheet No. PD60147 rev.U
IR2110( - 1 - 2)(S)PbF/IR2113( - 1 - 2)(S)PbF
HIGH AND LOW SIDE DRIVER
Features
? Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
Product Summary
V OFFSET (IR2110)
(IR2113)
500V max.
600V max.
?
?
?
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
I O +/-
V OUT
2A / 2A
10 - 20V
?
?
?
?
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
t on/off (typ.) 120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
Packages
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
14-Lead PDIP
IR2110/IR2113
16-Lead SOIC
IR2110S/IR2113S
drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
Typical Connection
HO
up to 500V or 600V
V DD
V DD
V B
HIN
HIN
V S
TO
SD
LIN
V SS
V CC
SD
LIN
V SS
V CC
COM
LO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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